探析现代电力电子及电源技术的发展

探析现代电力电子及电源技术的发展现代电源技术是应用电力电子半导体器件,综合自动控制、计算机(微处理器)技术和电磁技术的多学科边缘交又技术。在各种高质量、高效、高可靠性的电源中起关键作用,是现代电力电子技术的具体应用。Modernpowertechnologyistheapplicationofpowerelectronicsemiconductordevicesandintegratedautomaticcontrol,computer(microprocessor)andelectromagnetictechnologyofmultidisciplinaryedgeintechnology.Inallkindsofhighquality,highefficiency,highreliabilityofpowersupplyplaysakeyrole,istheconcreteapplicationofmodernpowerelectronictechnology.当前,电力电子作为节能、节才、自动化、智能化、机电一体化的基础,正朝着应用技术高频化、硬件结构模块化、产品性能绿色化的方向发展。在不远的将来,电力电子技术将使电源技术更加成熟、经济、实用,实现高效率和高品质用电相结合。Current,powerelectronicsasanenergy-saving,section,automation,intelligent,electromechanicalintegration,thebasisoftheapplicationtechnologyismovinginhigh-frequency,modularhardwarestructureandthedirectionofgreenproductperformance.Inthenearfuture,powerelectronictechnologywillenablepowertechnologymoremature,economic,practical,achievehigh,是从以低频技术处理问题为主的传统电力电子学,向以高频技术处理问题为主的现代电力电子学方向转变。电力电子技术起始于五十年代末六十年代初的硅整流器件,其发展先后经历了整流器时代、逆变器时代和变频器时代,并促进了电力电子技术在许多新领域的应用。八十年代末期和九十年代初期发展起来的、以功率MOSFET和IGBT为代表的、集高频、高压和大电流于一身的功率半导体复合器件,表明传统电力电子技术已经进入现代电力电子时代。Thedevelopmentdirectionofmodernpowerelectronictechnology,isgivenprioritytowithlowfrequencytechnologydealwiththeproblemoftraditionalpowerelectronics,togiveprioritytowithhighfrequencytechnologydealwiththeproblemofmodernpowerelectronics.Powerelectronictechnologybeganintheearly50s,60softhesiliconrectifierdevice,itsdevelopmenthasexperiencedtheeraoferaofrectifierandinverterandconverter,andpromotedthepowerelectronictechnologyinmanynewareasofapplication.Developedinthelateeightysandearlyninetys,representedbypowerMOSFETandIGBTandhighfrequency,highvoltageandlargecurrentofpowersemiconductorcompounddevice,showthat://www.fclqmm.com/traditionalpowerelectronictechnologyhasenteredtheeraofmodernpowerelectronics.1.1整流器时代1.1theageofrectifier大功率的工业用电由工频(50Hz)交流发电机提供,但是大约20%的电能是以直流形式消费的,其中最典型的是电解(有色金属和化工原料需要直流电解)、牵引(电气机车、电传动的内燃机车、地铁机车、城市无轨电车等)和直流传动(轧钢、造纸等)三大领域。大功率硅整流器能够高效率地把工频交流电转变为直流电,因此在六十年代和七十年代,大功率硅整流管和晶闸管的开发与应用得以很大发展。当时国内曾经掀起了-股各地大办硅整流器厂的热潮,目前全国大大小小的制造硅整流器的半导体厂家就是那时的产物。High-powerindustrialpowerisprovidedby(50hz)powerfrequencyacgenerators,butabout20%ofelectricityconsumptionintheformofdc,oneofthemosttypicalistheelectrolysis(non-ferrousmetalandchemicalrawmaterialsneedtodcsolution),traction,electricscooter,electricdrivetheinternalcombustionenginecarcity,metrolocomotives,trolleybuses,etc.)anddctransmission(rolling,papermaking,etc.)thethreeareas.High-powersiliconrectifiercaneffectivelyputthealternatingcurrentintodirectcurrent(dc)powerfrequency,thereforeinthe60sandseventys,thedevelopmentandapplicationofhighpowersiliconrectifierandbrakepipeto,atpresentthenationalgreatlysmallmanufacturingsiliconrectifiersemiconductormanufacturersistheproductofatthattime.1.2逆变器时代1.2inverterera七十年代出现了世界范围的能源危机,交流电机变频惆速因节能效果显著而迅速发展。变频调速的关键技术是将直流电逆变为0~100Hz的交流电。在七十年代到八十年代,随着变频调速装置的普及,大功率逆变用的晶闸管、巨型功率晶体管(GTR)和门极可关断晶闸管(GT0)成为当时电力电子器件的主角。类似的应用还包括高压直流输出,静止式无功功率动态补偿等。这时的电力电子技术已经能够实现整流和逆变,但工作频率较低,仅局限在中低频范围内。Appearedintheseventysaworldwideenergycrisis,theacmotorvariablefrequencyRadcliffespeedrapiddevelopmentbecauseoftheenergysavingeffectisremarkable.Thekeytechnologyofvariablefrequencyspeedregulationistodirectcurrent(dc)of0~100hzacinverter.Intheseventysandseventys,withthepopularityofvariablefrequencyspeedregulatingdevice,powerinverterwiththyristor,gianttransistor(GTR)powerandgateturnoffthyristor(GT0)wascastintheroleofpowerelectronicsdevice.Similarapplicationsincludehighvoltagedcoutput,staticreactive://www.fclqmm.com/powerdynamiccompensationetc.Atthistimeofthepowerelectronictechnologyhasbeenabletorealizerectifierandinverter,butworkingfrequencyislow,limitedinthelow-frequencyrange.1.3变频器时代1.3inverterera进入八十年代,大规模和超大规模集成电路技术的迅猛发展,为现代电力电子技术的发展奠定了基础。将集成电路技术的精细加工技术和高压大电流技术有机结合,出现了一批全新的全控型功率器件、首先是功率M0SFET的问世,导致了中小功率电源向高频化发展,而后绝缘门极双极晶体管(IGBT)的出现,又为大中型功率电源向高频发展带来机遇。MOSFET和IGBT的相继问世,是传统的电力电子向现代电力电子转化的标志。据统计,到1995年底,功率M0SFET和GTR在功率半导体器件市场上已达到平分秋色的地步,而用IGBT代替GTR在电力电子领域巳成定论。新型器件的发展不仅为交流电机变频调速提供了较高的频率,使其性能更加完善可靠,而且使现代电子技术不断向高频化发展,为用电设备的高效节材节能,实现小型轻量化,机电一体化和智能化提供了重要的技术基础。Intotheeightys,largescaleandverylargescaleintegratedcircuittechnologyrapiddevelopment,laidthegroundworkforthedevelopmentofmodernpowerelectronictechnology.Fineprocessingtechnologyandintegratedcircuittechnologywillcombinehighvoltagelargecurrenttechnology,appearedabatchof,thefirstistheadventofpowerM0SFET,ledtothesmallandmedium-sizedpowersourcestothedevelopmentofhighfrequency,andinsulatedgatebipolartransistor(IGBT),andhighfrequencydevelopmentopportunityforthelargeandmedium-sizedpowersources.Thereafter,MOSFETandIGBTofpowerelectronicsisthetraditionaltothemodernpowerelectronictransformation.Accordingtostatistics,bytheendof1995,powerM0SFE