大功率NPN三极管TIP35C参数

TIP35CTIP36B/TIP36CCOMPLEMENTARYSILICONHIGHPOWERTRANSISTORS■STMicroelectronicPREFERREDSALESTYPESDESCRIPTIONTheTIP35CisasiliconEpitaxial-BaseNPNtransistormountedinTO-218plasticpackage.Itisintentedforuseinpoweramplifierandswitchingapplications.ThecomplementaryPNPtypeisTIP36C.AlsoTIP36BisaPNPtype.®INTERNALSCHEMATICDIAGRAMOctober1999ABSOLUTEMAXIMUMRATINGSSymbolParameterValueUnitNPNTIP35CPNPTIP36BTIP36CVCBOCollector-BaseVoltage(IE=0)80100VVCEOCollector-EmitterVoltage(IB=0)80100VVEBOEmitter-BaseVoltage(IC=0)5VICCollectorCurrent25AICMCollectorPeakCurrent50AIBBaseCurrent5APtotTotalDissipationatTcase≤25oC125WTstgStorageTemperature-65to150oCTjMax.OperatingJunctionTemperature150oCForPNPtypesvoltageandcurrentvaluesarenegative.123TO-2181/4THERMALDATARthj-caseThermalResistanceJunction-caseMax1oC/WELECTRICALCHARACTERISTICS(Tcase=25oCunlessotherwisespecified)SymbolParameterTestConditionsMin.Typ.Max.UnitICEOCollectorCut-offCurrent(IB=0)VCE=60V1mAIEBOEmitterCut-offCurrent(IC=0)VEB=5V1mAICESCollectorCut-offCurrent(VBE=0)VCE=RatedVCEO0.7mAVCEO(sus)*Collector-EmitterSustainingVoltage(IB=0)IC=30mAforTIP36BforTIP35C/36C80100VVhFE*DCCurrentGainIC=1.5AVCE=4VIC=15AVCE=4V251050VCE(sat)*Collector-EmitterSaturationVoltageIC=15AIB=1.5AIC=25AIB=5A1.84VVBE(on)*Base-EmitterVoltageIC=15AVCE=4VIC=25AVCE=4V24VVfTTransitionFrequencyIC=1AVCE=10Vf=1MHz3MHzhfeSmallSignalCurrentGainIC=1AVCE=10Vf=1KHz25*Pulsed:Pulseduration=300μs,dutycycle≤2%ForPNPtypesvoltageandcurrentvaluesarenegative.TIP35C/TIP36B/TIP36C2/4DIM.mminchMIN.TYP.MAX.MIN.TYP.MAX.A4.74.90.1850.193C1.171.370.0460.054D2.50.098E0.50.780.0190.030F1.11.30.0430.051G10.811.10.4250.437H14.715.20.5780.598L2–16.2–0.637L3180.708L53.954.150.1550.163L6311.220R–12.2–0.480Ø44.10.1570.161RACDEHFGL6¯L3L2L5123TO-218(SOT-93)MECHANICALDATAP025ATIP35C/TIP36B/TIP36C3/4Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesofuseofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.NolicenseisgrantedbyimplicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationmentionedinthispublicationaresubjecttochangewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied.STMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswrittenapprovalofSTMicroelectronics.TheSTlogoisatrademarkofSTMicroelectronics©1999STMicroelectronics–PrintedinItaly–AllRightsReservedSTMicroelectronicsGROUPOFCOMPANIESAustralia-Brazil-China-Finland-France-Germany-HongKong-India-Italy-Japan-Malaysia-Malta-Morocco-Singapore-Spain-Sweden-Switzerland-UnitedKingdom-U.S.A.