Farechild MOSFET technology overview

–265VACinput12VSynchronousRectificationDriversAuxiliaryPWMcontrollerReferenceErrorAmpBuildingblocksforanAC/DCpowersupplyFeedbackPFC/PWMcontrolIC(s)TransformerOptocoupler3ProductsforAC/DCpowersupplies•Discretecomponents•500V,600VMOSFETsforprimaryside•600VRectifiersforPFC•60V–100VMOSFETsforsynchronousrectification•Analogintegratedcircuits•Lowinputvoltage(20V)MOSFETdrivers:FAN3xxx•600Vhalf-bridgehighvoltagedrivers:FAN73xx•CombinedPFC/PWMcontrollerIC:FAN4800•Standardproducts•Bridgerectifiers•References+erroramplifier•Erroramplifier,reference+optocoupler:FOD274x4500V&600VMOSFETsforprimaryside•QFET™•UniFET™•SuperFET™•SupreMOS™•Requirements•LowRDS(ON)forhigherefficiencyandlowercasetemperature•LowQGDandQGSforfastswitching,improvingefficiency•LowbodydiodeQRRandIRRMforhardswitchingapplicationsandtoimprovereliabilityofresonantapplications•Highbodydiodedv/dtanddi/dtratings•Rangeofdifferenttechnologiestosupportcost-optimizationoptions5199520042000yearQFET™,UniFET™SuperFET™Range–500Vto1000VA*RDS(on)=50mΩcm2@500VForgeneralpurposemarket(simpleprocess&bigdie)SupreMOS™Newchallengeforultra-LowRdsinHVplanarMOStechnologyRange600Vto650VA*RDS(on)=32mΩcm2@600VNewchallengeforextremelylowRDS(on)inHVtrenchMOStechnologyRange600Vto800VA*RDS(on)=20mΩcm2@600VMOSFETtechnologyoverview6500V–1000VQFET™ProductRange500VNchannelFQP/D3N50C2,50010FQP/D5N50C1,40018FQP/D6N50C1,20019FQP9N50C80028FQP11N50CF55043FQP13N50C48043600VNchannelFQP/D2N60C4,7009FQP/D5N60C2,50015FQP/D6N60C2,00016FQP8N60C1,20028FQA10N60C73044FQP12N60C65048800VNchannelFQP3N80C4,80013FQP6N80C2,50021FQP7N80C1,90027FQP8N80C1,55035FQA10N80C1,10044FQA13N8073068900VNchannelFQP4N90C4,20017FQP6N90C2,30030FQP8N90C1,90035FQA9N90C1,40045FQA11N90C1,100601000VNchannelFQA8N100C1,45053FQD1N509,0004FQD2N50B5,5006FQD1N60C11,5005FQD3N60C3,60010FQD1N8020,0006FQP/D2N806,30012FQD2N907,20012FQD2N10010,00012PackageA:TO-3PD:D-PACKP:TO-220PartnumberRdsonQg(typ)mΩnC7UniFET™TechnologyOverview•Features•LowestspecificRDS(ON)inregularDMOStechnology•Totalgatecharge(QG)reducedby25%•LowerMillercapacitance(CGD)•LowerCGD/CGSratio•LowerfigureofmeritRSPXQGD•Lowerinputgatecapacitance•Higheravalancheenergy•Increasedpowerdensity•Lowerturn-offenergywithoutaffectingEMI8280V–650VUniFET™ProductRange500VUniFETNchannelFDP/A16N5060025FDH27N5019056PartnumberRdsonQg(typ)mΩnCFDA50N50105105FDH45N50F12090FDD/U6N5090012.8FDPF16N50T60025FDP/A20N5024045.6FDPF20N50T24045.6FDA20N5024045.6650VUniFETNchannelFDP15N6544048.5350VUniFETNchannelFDPF12N3538018300VUniFETNchannelFDA59N305677280VUniFETNchannelFDA62N285177PackageA:TO-3PAF:TO3PFB:D²PACKI:I²PACKD:D-PACKH:TO-247L:TO-264P:TO-220PF:TO-220FFDA75N284140FDAF59N305677FDAF62N285177FDP18N5026545FDPF18N50T265459SuperFET™TechnologyOverview•Features•Useschargebalancetechnology•AdditionofextraprocessingstepstobuildepitaxiallygrownpillarsleadstoareductioninspecificRDS(ON)•LowCOSS•FairchildSemiconductor’simplementationsupportsfastbodydiodeoptionswithnoorlittleworseningofRDS(ON)•Excellentbodydiodedi/dtanddv/dtratings,especiallyforfastbodydiodeversions10SuperFET™ProductRange:600VFCD4N601,20012.8FCD/P/PF7N6060023FCP/PF/I/B/11N6038040FCP/A16N6026055FCP/PF/B/H20N6019075FCH/A47N6070210FCH47N60F73210FCD/U5N6095016FCP/PF/B/11N60F38040FCB20N60F19075PartnumberRdsonQg(typ)mΩnCPackageA:TO-3PB:D²PACKI:I²PACKD:D-PACKH:TO-247P:TO-220PF:TO-220FLowestRDS(ON)fastrecovery600VMOSFETsinTO220andTO247packages11ResonantconverterwaveformsVBUStVSIQ2tQ1Q2diodeQ2channelQ1diodeQ2channelturnedonConductingdevicesHighdv/dtonbodydiodeHighdi/dtonbodydiodeQ2bodydiodemaystillhavesomechargeatthetimeofthedv/dttransition,particularlyatlightloads.Ifso,Q2couldbedestroyed.Fastrecoverydiodesreducetheriskofchargebeingthere1.1:L.Saro,K.DierbergerandR.Redl,“High-VoltageMOSFETBehaviorinSoft-SwitchingConverters:AnalysisandReliabilityImprovements,”Proc.INTELEC1998,pp.30-4012FastrecoverySuperFET™summarydata3813.57.2nCSeedatasheetQGStyp1103621nCSeedatasheetQGDtyp73190380mΩVGS=10VRDS(ON)max50504.5V/nsSeedatasheetDiodedv/dt1200.81.4340200671FCP11N60F1.41.4VISD=Inom,VGS=0VVSDmax12001200A/µsFordv/dtratingDiodedi/dt1800690mJSeedatasheetEASmax32001280pFSeedatasheetCOSStypnsµCUnits2.01.1ISD=Inom,VGS=0V,dI/dt=100A/µsQrrtyp240160trrtypFCH47N60FFCA20N60FConditionsSpecificationDatasheetparametersat25ºC,seedatasheetforfulldetails13QFETC-series1x1xSuperFET0.65x0.65xDieShrink,57%@samedraincurrentSuperFET™DieSizeImprovementA600mΩSuperFETdevicefitsinDPAKBestQFETinDPAKhas2000mΩRDS(ON)141.0000.993VISD=11A,VGS=0VVSD3.894.25VIC=500µA,VDS=VGSVTH13516nAVDS=600VIDSS306299mΩIC=5mA,VGS=10VRDS(ON)675663VID=250µABVDSSnsµCUnits0.735.4ISD=11A,VGS=0V,dI/dt=100A/µsQrr119383trrFCP11N60FFCP11N60ConditionsSpecificationNoRDS(ON)PenaltyforFastRecoveryVersions15SuperFET™versusUniFET™comparison147.2nCSeedatasheetQGStyp2121nCSeedatasheetQGDtyp440380mΩVGS=10V