第一章-微纳加工技术发展概述

微纳加工技术原理第一章微纳加工技术发展概述1主要内容1.11.21.3本课程的主要内容集成电路的发展MEMS技术简介1.4苏州纳米区简介231.1课程的主要内容第一章微纳加工技术发展概述第二章CMOS工艺流程第三章洁净室、晶圆片清洗与吸杂处理第四章光刻第五章薄膜淀积第六章刻蚀第七章热氧化和Si-SiO2界面第八章离子注入第九章扩散（已学）第十章后端工艺第十一章未来趋势与挑战4教材5作者：唐天同，王兆宏西安交通大学电子工业出版社，2010教材6(美)JamesD.Plummer,MichaelD.Deal,PeterB.Griffin著,2005，电子工业出版社分数比例作业15%考勤15%实验20%考试50%71.2集成电路工艺的发展1.2.2促成集成电路产生的几项关键发明1.2.3半导体器件1.2.1集成电路工艺的发展历程8•1959and1990integratedcircuits.•Progressdueto:-Featuresize(特征尺寸)reduction13%years(Moore’sLaw).-Increasingchipsize(芯片尺寸)≈16%peryear.1.2.1集成电路工艺的发展历程EvolutionofIntegratedCircuitsFabrication9特征尺寸：工艺制造中晶圆片表面能刻印出图形的最小尺寸。OnApril19,1965ElectronicsMagazinepublishedapaperbyGordonMooreinwhichhemadeapredictionaboutthesemiconductorindustrythathasbecomethestuffoflegend.“Thenumberoftransistorsincorporatedinachipwillapproximatelydoubleevery24months.”KnownasMoore'sLaw,hispredictionhasenabledwidespreadproliferationoftechnologyworldwide,andtodayhasbecomeshorthandforrapidtechnologicalchange.Moore’sLaw1010亿GordonMoore：Intel创始人=tech_mooreslaw+body_presskit11•Theeraof“easy”scalingisover.Wearenowinaperiodwheretechnologyanddeviceinnovationsarerequired.Beyond2020,newcurrentlyunknowninventionswillberequired.IC最小特征尺寸的发展历史及规划DeviceScalingOverTime12•1990IBMdemoofÅscale“lithography”.•Technologyappearstobecapableofmakingstructuresmuchsmallerthancurrentlyknowndevicelimits.ITRSat硅技术发展规划ITRS—InternationalTechnologyRoadmapforSemiconductors预言硅主导的IC技术蓝图由欧洲电子器件制造协会（EECA）、欧洲半导体工业协会（ESIA）、日本电子和信息技术工业协会（JEITA）、韩国半导体工业协会（KSIA）、台湾半导体工业协会（TSIA）和半导体工业协会（SIA）合作完成。•器件尺寸下降，芯片尺寸增加•互连层数增加•掩膜版数量增加•工作电压下降:ApositionpaperreportsubmittedbytheITRSStartingMaterialsSub-TWG,June2005.促成集成电路产生的几项关键发明•Inventionofthebipolartransistor(点接触晶体管)-1947,BellLabs.W.ShockleyJ.BardeenW.Brattain1956年诺贝尔物理奖点接触晶体管：基片是N型锗，发射极和集电极是两根金属丝。这两根金属丝尖端很细，靠得很近地压在基片上。金属丝间的距离：~50μm16171948年W.Shockley提出结型晶体管概念1950年第一只NPN结型晶体管18•Grownjunctiontransistortechnology（生长结技术）ofthe1950s结型晶体管的制备19Ge•Alloyjunctiontechnology（合金结技术）ofthe1950s.•Doublediffusedtransistortechnology(气相源扩散工艺，1956福勒和赖斯)in1957，BellLabs.PN结裸露在外面20加热Ge高温炉Si腐蚀形成台面结构211955年，IBM608，3000多个锗晶体管，重约1090kg第一个商用晶体管计算机221958年Jack·Kilby发明的世界上第一块基于锗的集成电路，德州仪器相移振荡器简易集成电路专利号：No.31838743，批准时间1964.6.26•Theplanarprocess(Hoerni-Fairchild仙童公司,late1950s).•First“passivated(钝化)”junctions.平面工艺planarprocess23•平面工艺：二氧化硅屏蔽的扩散技术光刻技术JeanHoerni•Basiclithographyprocess–––ApplyphotoresistPatternedexposureRemovephotoresistregions––EtchwaferStripremainingphotoresist光刻Photolithography2425RobertNoyce与他发明的集成电路专利号：No.2981877，批准时间1961.4.26简短回顾：一项基于科学的伟大发明Bardeen,Brattain,Shockley,FirstGe-basedbipolartransistorinvented1947,BellLabs.NobelprizeKilby(TI)&Noyce(Fairchild),Inventionofintegratedcircuits1959,NobelprizeAtalla,FirstSi-basedMOSFETinvented1960,BellLabs.Planartechnology,JeanHoerni,1960,FairchildFirstCMOScircuitinvented1963,Fairchild“Moore’slaw”coined1965,FairchildDennard,scalingrulepresented1974,IBMFirstSitechnologyroadmappublished1994,USA26基本器件BJT：模拟电路及高速驱动MOS器件：高密度、更低功耗、更大的设计灵活性NMOS,PMOS,CMOS20世纪70年代1.2.3半导体器件PN结:270exp1qVIIkTBECppn+n-p+p+n+n+BJT28GateSourceDrain衬底SubstrateMOS:金属-氧化物-半导体NMOS29栅极：开关作用，取决于电压大小。N+：提供电子，提高开关时间。绝缘层防止Na+、K+干扰。沟道为P型。n+n+p+p+G端为高电平时导通G端为低电平时导通3031反向器输入：高电平，相当于1，输出0输入：低电平，相当于0，输出1没有形成回路，功耗低CMOSCMOS(ComplementaryMetalOxideSemiconductor):PMOS管和NMOS管互补共同构成的MOS集成电路。32•MetalPlanarizationrequiredformultiplemetallayers––––––MetalDepositionPatterningFillDielectricPlanarizationContactviasContactDepositionMultipleMetalLayers33•ICsarewidelyregardedasoneofthekeycomponentsoftheinformationage.•Basicinventionsbetween1945and1970laidthefoundationfortoday‘ssiliconindustry.•Formorethan40years,Moore'sLaw(adoublingofchipcomplexityevery2-3years)hasheldtrue.•CMOShasbecomethedominantcircuittechnologybecauseofitslowDCpoweronsumption,highperformanceandflexibledesignoptions.Futureprojectionssuggestthesetrendswillcontinueatleast15moreyears.•Silicontechnologyhasbecomeabasic“toolset”formanyareasofscienceandengineering.•Computersimulationtoolshavebeenwidelyusedfordevice,circuitandsystemdesignformanyyears.CADtoolsarenowbeingusedfortechnologydesign.•Chapter1alsocontainssomereviewinformationonsemiconductormaterialssemiconductordevices.Thesetopicswillbeusefulinlaterchaptersofthetext.SummaryofKeyIdeas34RichardFeynman,1959“There’sPlentyofRoomattheBottom”35一根头发=100微米=100000纳米1.3MEMS技术简介MEMS系统的定义MICRO-ELECTRO-MECHANICALSYSTEMS，集物理、化学和生物的传感器、执行器与信息处理和存储为一体的微型集成系统。3636(Tai,Fan&Muller)19701980HNA1960EDPPressureSensor(Honeywell)AnodicBondingKOHSiPressureSensor(Motorola)MEMS的历史Siasamechanicalmaterial(Petersen)SFBTMAH1990Thermo-pneumaticvalve(Redwood)SFBPressureSensor(NovaSensor)DRIE!!XeF2/BrF32,000process(USPatent)1950RGT(Nathansonetal)MetalLightValve(RCA)ADXLAccelerometerPolySiMicromo