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Feb,2004IntegratedSystemsEngineeringDevelopment,Modeling,andOptimizationofMicroelectronicProcesses,Devices,Circuits,andSystemsDiodeProcessandDevisesimulation1-2IntegratedSystemsEngineeringDiodeProcessflowDiodeprocessflowInitialWafersettingN-typewafer=Phos/5e14,Orientation=100SACOxide200APplusimplantB/30K/5e12/T7Pplusdrive-inAnnealTemperature=(1100),time=30min,Atmosphere=Mixture,Flow(N2=3l/min,O2=0.5l/min)EchooxideStripSACoxideTarget:SimulateDiodeforwardI-VcurveandDiodeVt1-3IntegratedSystemsEngineeringStarttoexecute“GENESISe”1-4IntegratedSystemsEngineeringHowtoexecuteGENESISonLinuxorUnixStep1:Pleasetype“GENESISe”inthepromptwindowStep2:Youcansee“GENESIS”window1-5IntegratedSystemsEngineeringHowtoexecuteGENESISonWindowXPYoucansee“GENESIS”window1-6IntegratedSystemsEngineeringExecuteX-serversoftware(OnlyWindowXPneedsthis)Youcanseeoneadditionalitem(Exceed)1-7IntegratedSystemsEngineeringGENESIS:CreateNewProject1-8IntegratedSystemsEngineeringGENESIS:SaveNewprojectnameas“Diode”Step1Step2:inputprojectname“Diode”1-9IntegratedSystemsEngineeringGENESISflow–Addtools“dios”Step1:“Rightclick”on“NoTools”Step2:input“ToolsName”andSelectDBToolStep31-10IntegratedSystemsEngineeringGraphicEditortoolforProcessFlow:Ligament1-11IntegratedSystemsEngineeringLigament–EditLigamentflowStep1:“Rightclick”on“Dios”icon1-12IntegratedSystemsEngineeringLigament–AddProcessHeaderStep1Step2:ThefirststepfortheProjecteditStep3:Youcansee“3”itemsintheleftwidnow1-13IntegratedSystemsEngineeringLigament–Environmentsetting(1)Seenextpageaboutthesetwosetting1-14IntegratedSystemsEngineeringLigament–Initialconditionsetting(2)–GirdsizeNx=2repl(cont(maxtrl=7,RefineGradient=-6,RefineMaximum=0,RefineJunction=-7,RefineBoundary=-6))1-15IntegratedSystemsEngineeringMeshrefinementRefineGradientRefineMaximumRefineJunctionRefineBoundaryRefineACInterfaceRefineBeforeFrontRefineAll:LowestLevelindefinedregion1-16IntegratedSystemsEngineeringLigament–MeshLevel(1D)RefineJunction:Level=7RefineBoundary:Level=6Level=1definition=(X_right–X_left)/Nx=(1.0–0.0)/2=0.5umLevel=1ZoomInLevel=3Level=4Level=7Level=1:0.5umLevel=2:0.25umLevel=3:0.125umLevel=4:0.0625umLevel=5:0.03125umLevel=6:0.0156umLevel=7:0.0078umLevelsize:PplusNsub1-17IntegratedSystemsEngineeringLigament–MeshLevel(2D)RefineBoundary:Level=6RefineJunction:Level=7Level=1definition=(X_right–X_left)/Nx=(1.0–0.0)/2=0.5umLevel=1Level=2Level=6Level=1:0.5umLevel=2:0.25umLevel=3:0.125umLevel=4:0.0625umLevel=5:0.03125umLevel=6:0.0156umLevel=7:0.0078umPplusLevel=1Level=7Level=6Level=1Level=7Level=6NsubLevel=3•Turnon2DmeshinDIOSrepl(cont(1d=off))InitialPplusas-implFinal1-18IntegratedSystemsEngineeringLigament–Substrate(Phos/5e14)1-19IntegratedSystemsEngineeringLigament–Inputthecomment1-20IntegratedSystemsEngineeringLigament–Deposit200AscreenoxideDrag“doposit”aftercomment1-21IntegratedSystemsEngineeringLigament–CheckifyourinputiscorrectClickthistobackto“editmode”ClickthistocheckifyourinputiscorrectandSeetheDIOSflowinputDIOSinputfile1-22IntegratedSystemsEngineeringLigament–ImplantB/30keV/5e12/T7Drag“implant”afterdeposit1-23IntegratedSystemsEngineeringLigament–Save1DBoronas-implantprofileDrag“insert”afterImplant1D(file=n@node@_as_implant,spec(netactive,Btotal),xs=0.5,noappend)1-24IntegratedSystemsEngineeringLigament–30min1000Canneal1-25IntegratedSystemsEngineeringLigament–EtchtheScreenoxide1-26IntegratedSystemsEngineeringLigament–Save1DBoronprofileafteranneal1D(file=n@node@_final,spec(netactive,Btotal),xs=0.5,noappend)1-27IntegratedSystemsEngineeringLigament–Savedopingprofileandstructure&DefinetheContactsave(file=n@node@,type=mdrawcontact(contact1(Pplus,x=-0.5,y=0.1,xe=1.5,ye=-0.1)contact2(Nsub,location=bottom)))1-28IntegratedSystemsEngineeringLigament–CheckifallyourinputarecorrectStep2:Clickthistobackto“editmode”Step1:ClickthistocheckifyourinputarecorrectAllDIOSinputfileStep3:SavetheLigament1-29IntegratedSystemsEngineeringRunProcessSimulation:DIOS1-30IntegratedSystemsEngineeringRunDiosProjectStep1:ClickthisStep2:Clickthis1-31IntegratedSystemsEngineeringOnrunningDIOSClickthistoshowmeshClickthistobreakthe“DIOS”executing1-32IntegratedSystemsEngineeringUse“Inspect”toseethe1Dprofile(1)1-33IntegratedSystemsEngineeringUse“Inspect”tocheck1Dprofile(2)click“middle”buttontomoveLegendZoominthepicture,Use“Left”buttonselectonerectanglerangeSwitchY-axistoLinear/LogAs-implantFinalprofile1-34IntegratedSystemsEngineeringUse“Tecplot”tosee2Dprofile(1)1-35IntegratedSystemsEngineeringUse“Tecplot”tosee2Dprofile(2)Selectallmaterial,thenclicktoshowmeshSelectthecheckeditems,suchas:netdopingorBorondoping,ormaterial1-36IntegratedSystemsEngineeringMeshtransferbetweenDIOSandDESSIS:Mdraw1-37IntegratedSystemsEngineeringMdrawtooleditandpreferences“Rightclick”on“Dios”icon“Rightclick”on“Mdraw”icon1-38IntegratedSystemsEngineeringChangeMdrawpreference(onlyWindowXPneedsthissetting)Step2:input“cmd/cstartmdraw–noloadCmd”Step1:Select/Binaries/editor/mdrawboundStep3:clickthisStep4:click“Save”1-39IntegratedSystemsEngineeringMdrawboundaryEdit1-40IntegratedSystemsEngineeringMdrawbou
本文标题:sentaurus-二极管例子
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