大马士革工艺

InterconnectMaterialsandProcess2.TheTrendsofICandInterconnectCu/LowkDamasceneProcessqLowresistivityofCuConductorqHighElectro-andStress-MigrateReliabilityqCopperreadilydiffusesintosiliconandmostdielectricsqTraditionalRIEisnotpracticalforCuetchingCharacteristicsofCuinterconnectCu/LowkDamasceneProcessqDamasceneStructureandProcessforthepatternqBarrierLayerTechnologyforthecontaminationSolutionofCuinterconnectCuinterconnectintegrationtechnologyisaninnovationofICtechnologyCMPprocessisthetechnologybasisCu/LowkDamasceneProcessR.H.HAVEMANN,PROCEEDINGSOFTHEIEEE,VOL.89,NO.5,MAY2001Cu/LowkDamasceneProcessCuInterconnectIntegrationProcessFlowchartR.H.HAVEMANN,PROCEEDINGSOFTHEIEEE,VOL.89,NO.5,MAY2001Cu/lowkTechnologyChallengeqProcessØDepositionØEtchqReliabilityR.H.HAVEMANN,PROCEEDINGSOFTHEIEEE,VOL.89,NO.5,MAY2001DamascenestructuresThreedamascenestructureswereproposedDamascenestructuresnDamascenestructuresmaychangentheapproachtophotoresiststrippingnThesubsequentcleaningforinterconnectlayers.GlobalInterconnectMaterialsnConductornTungstennCoppernBarriernTa,TaN,TaSiN,W,WN,WSiNbyPVDnTa,TaN,TaSiN,W,WN,WSiNbyCVD,ALDorothernDielectricnLow?(k4)forinterlayerdielectricsnStandardk(k=4~10)foretchstopdielectricsnHighk(k20)fordecouplingcapacitor