新一代栅介质材料-高K材料

*北京市教育委员会科技发展计划(Km200310005011);北京市优秀人才培养专项经费资助项目(20041D0501513);北京市中青年骨干教师培养计划项目李驰平:男,研究生Email:[e-mail]王波:联系人,教授,博导!!!K*李驰平,王波,宋雪梅,严辉(,100022)介绍了微电子工业的发展趋势和SiO2作为CMOS栅介质减薄所带来的问题,从而引出对高K材料的需求,简单介绍了作为栅极介质的各种高介电常数材料的性能的比较及制备高K薄膜的主要方法,总结了一些高K材料的研究现状,论述了目前有待进一步解决的问题,并展望了高K材料的发展趋势KSiO2SiO2NewGateDielectricMaterials!!!HighKMaterialsLIChiping,WANGBo,SONGXuemei,YANHui(InstituteofMaterialsScienceandEngineering,BeijingUniversityofTechnology,Beijing100022)AbstractThispaperprovidesabriefreviewofdevelopmentofthemicroelectronicindustry;describeshowthepropertiesofMOSFETsareaffectedwhentheSiO2layerthicknessdecreases,whichleadstotherequirementofhighKgatedielectricmaterials;analysessomesortsofmaterialsforhighKgateandthemethodsforpreparinghighKfilm;summarizesrecentprogressinhighKgatedielectricsandpointsoutsomeproblemstobesolvedbyfurtherresearch.KeywordshighKgatedielectricmaterials,decreaseofSiO2layerthickness,equivalentoxidethickness1,,,,,181,DRAM34[1](1)1Fig1SchematicmapofMoore∀lawMOS(MOSFET)[2](DRAM)(Flash)(FeRAM),,0.18mCMOS,IntelIBMTI0.13m0.09m,0.10m2001ITRS(InternationalTechnologyRoadmapforSemiconductors)20050.10m[3][4],0.1m,,,1V,3.5nm1#10-12A/cm21.5nm1#10A/cm2,1/2,13[5]MOS,,2SiO2,CMOS(SiO2),,[6]:ID=WLCinvVG-VT-Vd2VDL,SiO2Cinv,ID,CMOS[7]SiO2,Muller[8]Tang[9]Neaton[10],SiO27,∃17∃!!!K/,,SiO214SiO210,:13~15SiO21~10A/cm2,SiO21,5;,20SiO2,SiO2,SiO2,,,,SiO2,MOS,SiO2,SiSiO2(1010/cm2),,SiO2,SiO2SiO2SiSiO2(r~3.9)Si3N4(r~7),SiN/Si,,N,,[11]3KSiO2MOSFET,[12]:IDsat=12nWL0KAtox(VG-VT)2:IDsatMOSFET,VG,VT,0(0=l),n[13],W,L,tox,K,,,,,SiO2(EOT)teq,KSiO2SiO2,:C=k0A/tSiO2(EOT)teq,:thighK=KhighKKoxteq=KhighK39teq(:3.9SiO2):thighKK,teqSiO2,KhighKK,KoxSiO2,K3.9SiO2,,(),,[14],,4K(K)(K=3.9)K3:,1,,,,,,1000[15]1Table1ThedielectricconstantofseveraldielectricmaterialsKSiO2Oxidation()3.9Si3N4JVD()6~7ZnOSolGel()RFSputtering()8~12Ta2O5MOCVD(),Sputtering25~50HfO2MOD()21ZrO2MOD,25BSTMOCVD,MBE()180PZTMOCVD,MBE400~800K:DRAMMOSFET,,,,DRAM,K,,K,,,;K,DRAM,MOSFET,,3:,,;,,/,SiO2,K,SiO2,,,MOSFET,SiO2,SiO2∃18∃20062202Si,;SiO2;SiO2[16]:(1),Ec,,,;(2),,,;(3)Si,,Si,,;(4)Si,MOSFETSi,2%10%30fF/m2&1A/cm2&1011cm2eV(EOT)&1.0nm%15mV/cm&1010/cm5K5.1,,,:;6.5~7.2,;;,Si,LPCVDPECVDJVD,JVD,,,5.2,Al2O3Ta2O5TiO2ZnOZrO2HfO2CeO2Y2O3,10~80,(DRAM),(PLD)(CVD)3:,Ta2O5TiO2;,ZrO2HfO2CeO2Y2O3;,ZnO,SiO2,ZrO2SiO2HfO2SiO25.3,PbZrxTi1-xO3BaxSr1-xTiO3,,(),SiO2DRAM,(SrTiO3),(Solgel)(MOCVD)(MBE):DRAMFET,0/1FET,6K6.1∋B(TiZrHf)TiZrHf∋B,,:(,),∗Dalapati,G.K.[17]PECVDTiO2,QiWenjie[18]ZrSixOyN2600~1000+800+30s,ZrSixOy/Si,,N2900+,teq,(900+),teq0.4nmHfO2EOT0.5nm[19],3nm,()20mV,1,1%6.2,A(AlGa)Al2O3,(Si)E.P.Gusev[20]Al2O3/Si,SiOx,Dit()Chin[21]teq()=2.1nmAl2O3MOSFET,Vg=1V,Ileak=10-8A/cm2,teqSiO2MOSFET10-1A/cm2JamesKolodzey[22]AlN,,,800~1100+1~3hCV,1011cm-2,SiO2Shao[23]CVDEOT0.8nmAl2O3,EOT1.2nm1V36mA/cm26.3,B(YLa),BY2O3La2O3J.Kwo[24]Y2O3SiSiO2,teq1nmY2O3,1V,10-6A/cm2CVDit1011cm-2eV-1He850+950+RTA(rapidthermalannealing)1min,,SiO2∃19∃!!!K/2+/s,WuY.H.[25]La2O30.48nm-1V,0.06A/cm2,3.0#1010eV-1/cm2,2V,10,6.4−B(Ta)Ta2O5(K~26),DonggunPark[26]Ta2O5NMOSFET,3.8nm2.4nmSiO2teq1.8nm,Vg=Vd=1.5V,0.316mA,Ta2O5SiO2,MOS,,:[27],Si[28],Si[29]7,,SiO2,,:(1),;(2),,;(3),,,;(4)(),;(5);(6),,,:SOICMOSMOSFETMOSFETMOSFETMOSFETDTMOSFETCMOS,,,(ULSI),SiO2,K,,(),,SiO2,,1MelliarSmithCM,HagganDE,TroutmanWW.Keystepstotheintegratedcircuits.BellLabsTechnJ,1997,(2):152..:,2001.53RaymondHeald,WangPing.Variabilityinsub100nmSRAMdesigns.SemiconductorIndustryAssociation(SIA),Thenationaltechnologyroadmapforsemiconductors,Austin,20014DennardR,AensslenFG.DesignofionimplantedMOSFET∀swithverysmallphysicaldimensions.IEEEJSolidStateCircuits,1974,(9):2565LoSH,BushananDA,TaurY,etal.QuantummechanicalmodelingofelectrontunnelingcurrentfromtheinversionlayerofultrathinoxidenMOSFET∀s.IEEEElecDevLett,1997,18(5):2096WilkGD,WallaceRM,AnthonyJM.HighKgatedielectrics:currentstatusandmaterialspropertiesconsiderations.JApplPhys,2001,89:52437ChatterjeeA,RodderM.Atransistorperformancefigureofmeritincludingtheeffectofgateresistanceanditsapplicationtoscalingtosub0.25mCMOSlogictechnologies.IEEETransElectronDevices,1998,45:12468MullerDA,SorschT,MoccioS,etal.Theelectronicstructureattheatomicscaleofultrathingateoxides.Nature,1999,399:7589TangSP,WallaceRM,SeabaughA,etal.Evaluatingtheminimumthicknessofgateoxideonsiliconusingfirstprinciplesmethod.ApplSurfSci,1998,135:13710NeatonB,MullerDA,AshcroftNW.ElectronicpropertiesoftheSi/SiO2interfacefromfirstprinciples.PhysRevLett,2000,85:129811.Ta2O5:[].:,200412LiaoCC,AlbertChin,TsaiC.ElectricalcharacterizationofAl2O3onSifromthermallyoxidizedAlAsandAl.JCrystalGrowth,1999,201/202:65213,,.:,1994.8414.:[]:,200215HiltonAD,RichettsBW.DielectricpropertiesofBaSrTiOceramics.JPhys,1996,29(3):132116,,...,200217DalapatiGK,ChatterjeeS,SamantaSK,etal.ElectricalcharacterizationoflowtemperaturedepositedTiO2filmsonstrainedSiGelayers.ApplSurfSci,2003,210(324):24918QiWenjie,NishR,DharmarajanE,etal.Ultrathinzirconiumsilicatethinfilmwithgoodthermalstabilityforalternativegatedielectricapplication.ApplPhysLett,2000,77(11):170419HarrisH,ChoiK,MehtaN,e