二十四所半导体工艺技术发展历程与展望

:2007212228;:20082012131,2,2,1,2(1.;2.,400060):1.5(40mm)6(150mm),10m0.5m,,5V800V,,,,,:;;;CMOS;VDMOS;BiCMOS;SOI:TN304.05:A:100423365(2008)0120017206DevelopmentandProspectofSISCsSemiconductorICTechnologyHEKai2quan1,2,WANGZhi2kuan2,ZHONGYi1,2(1.NationalLaboratoryofAnalogICs;2.SichuanInstituteofSolid2StateCircuits,CETC,Chongqing400060,P.R.China)Abstract:DevelopmentcourseofSISCssemiconductorICtechnologysinceitsestablishmentin1968isre2viewed.Thewafersizeevolvedfrom40mmto150mm,andthecriticaldimensiondecreasedfrom10mto0.5m.ThedevicefrequencyhasincreasedfromkiloHertstoRF,andthesupplyvoltagehasgoneupfrom5Vtoover800V.SincethedevelopmentofChinasfirstlargescaleintegratedcircuit,SISC,whichistheonlyinstituteinChinaengagedinresearchanddevelopmentofanalogICs,hasmadeoutstandingachievementsinvariousfields.Theroad2mapofSISCsanalogandASICtechnologyisalsopresented.Keywords:SemiconductorICtechnology;Bipolar;Complementarybipolar;CMOS;VDMOS;BiCMOS;SOIEEACC:255012413:1986,;,,19682008,24404040,24:,,GaAs,DAC,,,,40,24196840mm50mm75mm100mm,150mm10m0.5m;3m0.2m;(MHz)(20GHz):MOS/CMOSCMOSPNGaAsPNLOCOSCBiCMOSSOIVDMOS38120082MicroelectronicsVol138,No.1Feb12008BiFETLC2MOSSOIBiCMOSGeSiHBTBCDMEMS:MOS/(A/DD/A)22.1(1986)IC196512,13GT31IC,IC1966,ICIC3,ICMOSICIC419703,XT30MOSCT30,MOS,24,,,MOS,,,,2.1.1MOS19726,120P9,6mMOS,/SiO2:19782,N4kDRAM,1980;19814,68005MOSLSIC;1983,16kDRAMM4116,1k4SRAMM21141983,HMOS2I,:LPCVD:E/DMOS1kSRAMM2115A1983;4kSRAMM21419841985,HCMOS2I,2564SRAMHCMS6562,,512CCDBAD232C402001MOSICID11970-1972PMOS21972-19786mNMOS31972-1983HMOS2I41972-1985HCMOS2I2.1.2IC1970,ECL,ECL10KIC,;;,BJT1977,S31DECL,,1977,ECL,34mPN(xj0.3m),:S14500MHzDS18500MHzDS031000MHz91980,,ECL100K;ECL100KIC,,,2,2I1981,ECL100K3-518:2008/,198319843S4020ECL100IC,LS201981,TTL,19836,319861,ST300TTL2ICID11970-1977ECL10KIC21977-1978ECL31980-1981ECL100KIC41981-1983LSTTLIC2.1.3IC1970,IC,,IC,GaAsIC(3)3ICID11970-1979IC21970-1971IC31970-1979IC41970-1980251970-1984I2L61970-1981GaAsICIC,RB,:1979500MHz,1001000MHz/,,,19806,2(BiCMOS),X5619845,I2L,X3417/280,IC,1971IC,,()1977,X63IC;19861,X2527ICGaAsIC,19814G10GaAs2BFLGaAs,1979,19816,X808D/AD/A,2.2(1986-1993)1986,,,MOS,,;4ICID11986-199321986-199375mm31986-199341986-1993MOSIC2.2.150mm,,3m,IIIS,2GHz,1:19,SE100,2.2.275mm,X1525,,X1525,75mm,75mm,X099,,1990,75mm,X497X1525,X1525,X1525,B6035,2.2.3,,,3m,1GHz,,JF36//JF37;,,,,ZP952.2.4MOSIC1988-1993,,8mCMOS,A/D,BD512CM303X08088A/D;,,SOS,SOSCM4066CM1606VDMOS,VDMOS,VDMOS,600V/1AVDMOS,2.3(1993-1997),1993,,,75mm,,,,;,5ICID11993-199775mmS21993-199775mmMOSIC31993-199775mm41993-199775mmSDBSOI51993-199775mm2.3.1S1994,,,S1995-1997,,,100mm,50mm75mm2.3.2MOS1994,,,CMOS,50mm,75mmCMOSVDMOS,CMOS8mCMOS5mCMOS,5m,B60352.3.3SDBSOI/75mmSDBSOI,,75mmSDBSOI,,,,,75mmSDA9700SW244SW003ASW2152.4(1998)2.4.175mm,IC1998,,75mm,,1999-2001,75mmCMOSVDMOS20:2008;,20002.4.2,1999,2mCBiCMOS,100mm,CMOS,75mm100mm,2mCBiCMOS,100mm2mCBiCMOS,;,75mm,75mm5m(B6035)100mm2002,75mm100mm,,5m2m,12GHz5GHz,,CBiCMOS8m/CMOS3mCMOS7,PCM67ICID11998-2004100mm21998-2004100mm31998-2004100mm41998-2004100mm2mCBiCMOS51998-2004100mm8mCMOS61998-2004100mm3mCMOS71998-2004100mm2.4.3100mm,Foundry,,PCM100mm,PCM,PCM2005,PCM,PCM,PCM,PCM,DRCLVS,PDK,ICFoundry,,1.5mSOI,100mmSOI,,SOI,10,100mm3000,40,3000,1995,2003,150mm0.8m;2004,100mmM3010CMOSB4020VD2MOS;SB904SB903SW208SA179,150mm0.5m3ICIC(A/DD/A)(),,;A/DD/A;;,,,A/DD/A,,VT,ICBiCMOSCMOS,,BiCMOSCMOS,CMOSBiCMOS/;;CMOSIC;SiGe,GaAs,ICNPNPNP,SOI,IC1:21/SOI,:/2JFETSOISi/SiGeHBTSiGeHBT,MOSMIM,(CMOS),SiGeHBT/,SiGe,SiGeHBT12GHz,SiGeHBTLNABiCMOSRF0.8mBiCMOSNMOSPMOSNPNLPNPHVNMOS,,A/DD/ARFSiGeBiCMOSSOIBiCMOS,735ICSOI2006-20082JFET2006-2008SOI2006-2008SiGeRF2008-MOS0.350.8mCMOS(0.8m)CMOS2007-1001000VVDMOS&VDMOS2006-LC2MOSA/DD/A,2006-2007BiCMOS0.50.8mBiCMOSICA/DD/A2006-20080.50.8mSOIBiCMOSICA/DD/A2006-20080.50.8mSiGeBiCMOSRFIC2008-201250VBCD50V2006-2008700VBCD700V2006-2008MEMS2005-IC,1),,ICCMOS2LDMOSBiCMOS2LDMOSBCD(Bipolar2CMOS2DMOS)50V700VBCD50BCD7002)IC,,,/RF(SOC)3),,,MEMSSi,,,,,,IC,,:(1963-),(),,1984(),22:2008